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5 1 f o 1 e g a p 0 0 . 3 . v e r 0 0 3 0 j e 0 4 0 0 s d 9 0 r ma r 12, 2013 t he mark < r> s ho w s major revised point s. t he revised point s can be easily s earched b y cop y i ng an "" in t h e pdf f ile and sp ecif y i ng it in t he " f ind w hat:" f ield. t e e h s a t a d NE5550779A silicon power ldmos fet fea t ure s ? hig h out put p o we r : p out = 3 8 . 5 d b m typ. ( v d s = 7. 5 v , i dset = 1 4 0 m a , f = 4 6 0 m h z , p i n = 2 5 d b m ) ? high powe r a d ded efficiency : add = 66% typ. ( v ds = 7.5 v , i dset = 1 4 0 m a , f = 4 6 0 m h z, p in = 25 dbm ) ? high l i n ear g a i n : g l = 22.0 d b typ . ( v d s = 7 . 5 v, i dset = 1 4 0 m a , f = 4 6 0 m h z, p in = 1 0 d b m ) ? high esd t o leran ce ? suitable fo r v h f t o uh f-b a n d class - a b p o we r am plifier. applications ? 1 5 0 m h z b a n d r a d i o s y s t e m ? 4 6 0 m h z b a n d r a d i o s y s t e m ? 9 0 0 m h z b a n d r a d i o s y s t e m ordering information pa rt numbe r orde r numbe r pack a g e ma r k i ng supply i ng for m ne55 507 79a ne55 507 79a- a 79a (pb-f ree) w 8 ? 12 mm w i de e mbosse d tapin g ? ga te pin faces the perforati on side o f the ta p e ne55 507 79a- t 1 ne55 507 79a- t 1-a ? 12 mm w i de e mbosse d tapin g ? ga te pin faces the perforati on side o f the ta p e ? qty 1 k p cs/reel n e 5 5 507 79a - t 1 a n e 5 5 507 79a - t 1 a - a ? 12 mm w i de e mbosse d tapin g ? ga te pin faces the perforati on side o f the ta p e ? qty 5 k p cs/reel rema r k t o order evalu a tion sam p les, pleas e contact y o ur n e arb y s a les o ffice. pa rt number fo r sa mple o rd e r: n e555 077 9 a-a absolute maximum ratings (t a = 25 c, unless otherw ise specified) o p eration in e x cess of a n y o n e o f t h ese p a r a m eters m ay resu lt i n p er m a n e n t d am ag e. para mete r symbol ratings unit drain to s o urc e voltag e v d s 30 v gate to source voltage v g s 6 .0 v i t n e r r u c n i a r d d s 2 .1 a drain c u rrent (50% dut y p u l sed) i d s - pul s e 4 .2 a t o tal p o w e r d i ssipati o n note p t o t 17.8 w chan n e l t e m per a t u r e t c h 150 c storage t e mperature t s t g ? 55 to + 150 c note: value at t c = 2 5 c ca utio n observe p r e c aution s wh en handlin g be cause these d evi ce s are se nsitive to electrostati c disch arg e. r09 d s0 040e j03 00 rev.3.00 mar 12, 20 13 a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
NE5550779A r09ds0040ej0300 rev.3.00 page 2 of 15 mar 12, 2013 recommended operating range (t a = 25 c) parameter symbol test conditions min. typ. max. unit drain to source voltage v ds ? 7.5 9.0 v gate to source voltage v gs 1.65 2.20 2.85 v drain current i ds ? 1.4 ? a input power p in f = 460 mhz, v ds = 7.5 v ? 25 30 dbm electrical characteristics (t a = 25 c, unless otherwise specified) parameter symbol test conditions min. typ. max. unit dc characteristics gate to source leakage current i gss v gs = 6.0 v ? ? 100 na drain to source leakage current (zero gate voltage drain current) i dss v ds = 25 v ? ? 10 a gate threshold voltage v th v ds = 7.5 v, i ds = 1.0 ma 1.15 1.65 2.25 v drain to source breakdown voltage bv dss i ds = 10 a 25 38 ? v transconductance g m v ds = 7.5 v, i ds = 490 70 ma 1.26 1.54 2.03 s thermal resistance r th channel to case ? 7.0 ? c/w rf characteristics output power p out f = 460 mhz, v ds = 7.5 v, 37.0 38.5 ? dbm drain current i ds p in = 25 dbm, ? 1.38 ? a power drain efficiency d i dset = 140 ma (rf off) ? 68 ? % power added efficiency add ? 66 ? % linear gain g l note 1 ? 22.0 ? db load vswr tolerance note 2 f = 460 mhz, v ds = 9.0 v, p in = 25 dbm, i dset = 140 ma (rf off) load vswr=20:1(all phase) no destroy output power p out f = 157 mhz, v ds = 7.5 v, ? 38.5 ? dbm drain current i ds p in = 23 dbm, ? 1.36 ? a power drain efficiency d i dset = 140 ma (rf off) ? 69 ? % power added efficiency add ? 67 ? % linear gain g l note 3 ? 24.0 ? db output power p out f = 900 mhz, v ds = 7.5 v, ? 37.4 ? dbm drain current i ds p in = 27 dbm, ? 1.26 ? a power drain efficiency d i dset = 140 ma (rf off) ? 58 ? % power added efficiency add ? 53 ? % linear gain g l note 4 ? 17.0 ? db notes: 1. p in = 10 dbm 2. these characteristics values are measurement usin g measurement tools especially by renesas. 3. p in = 5 dbm 4. p in = 10 dbm remark dc performance is 100% testing. rf performanc e is testing several samples per wafer. a wafer rejection criterion for standard dev ices is 1 reject for several samples. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
NE5550779A r09ds0040ej0300 rev.3.00 page 3 of 15 mar 12, 2013 test circuit schematic for 460 mhz c20 c10 in out c22 c11 c12 c13 c21 c1 v ds c1 l1 r1 v gs NE5550779A 50 50 l3 l2 components of test circuit for measuring electrical characteristics symbol value type maker c1 1 f grm188b31c105ka92 murata c10 27 pf grm1882c1h270ja01 murata c11 2.7 pf atc100a2r7jw american technical ceramics c12 12 pf atc100a120bw american technical ceramics c13 12 pf atc100a120bw american technical ceramics c20 24 pf atc100a240jw american technical ceramics c21 6.8 pf atc100a6r8bw american technical ceramics c22 100 pf atc100a101jw american technical ceramics r1 2 k 1/10 w chip resistor koa rk73b1jttd202j l1 114 nh 0.5 mm, d = 3 mm, 10 turns ohesangyou l2 4.7 nh lqw18an4r7ng00 murata l3 3.0 nh lqp15mn3n0b02 murata pcb ? r1766, t = 0.4 mm, r = 4.5, size = 30 48 mm panasonic sma connecter ? waka 01k0790-20 waka a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
NE5550779A r09ds0040ej0300 rev.3.00 page 4 of 15 mar 12, 2013 component layout of t est circuit for 460 mhz c1 c1 c1 c1 r r 1 1 l l 1 1 c1 c1 0 0 c1 c1 1 1 c1 c1 2 2 c c 20 20 c c 21 21 c c 22 22 c1 c1 3 3 l2 l2 l3 l3 rf rf in in rf out rf out v v gs gs v v ds ds c1 c1 c1 c1 r r 1 1 l l 1 1 c1 c1 0 0 c1 c1 1 1 c1 c1 2 2 c c 20 20 c c 21 21 c c 22 22 c1 c1 3 3 l2 l2 l3 l3 rf rf in in rf out rf out v v gs gs v v ds ds a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
NE5550779A r09ds0040ej0300 rev.3.00 page 5 of 15 mar 12, 2013 typical characteristics 1 (t a = 25 c) r: f = 460mhz, v ds = 3.6/4.5/6/7.5/9 v, i dset = 140 ma, p in = 0 to 30 dbm im: f1 = 460mhz, f2 = 461 mhz, v ds = 3.6/4.5/6/7.5/9 v, i dset = 140ma, p out (2 tone) = 12 to 37 dbm 3rd/5th order intermodulation distortion im 3 /im 5 (dbc) 2 tones output power p out (2 tone) (dbm) im 3 /im 5 vs. 2 tones output power 2nd harmonics 2f 0 (dbc) output power p out (dbm) 2f 0 vs. output power power gain g p (db) power added efficiency add (%) remark the graphs indicate nominal characteristics. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
NE5550779A r09ds0040ej0300 rev.3.00 page 6 of 15 mar 12, 2013 test circuit schematic for 157 mhz c20 c10 in out c23 c11 c12 c21 c22 c1 v ds c1 l1 r1 v gs NE5550779A 50 50 l20 l10 components of test circuit for measuring electrical characteristics symbol value type maker c1 1 f grm31mb11e105ka01 murata c10 100 pf gqm1882c1h101jb01 murata c11 5.6 pf gqm1882c2a5r6db01 murata c12 39 pf gqm1882c1h390jb01 murata c20 22 pf grm1882c1h220ja01 murata c21 68 pf gqm1882c1h680jb01 murata c22 15 pf gqm1882c1h150ja01 murata c23 100 pf gqm1882c1h101jb01 murata r1 5.1 k 1/10 w chip resistor roam mcr03j103 l1 74.7 nh 0.4 mm, d = 2 mm, 10 turns ohesangyou l10 27 nh llq2012-f27n toko l20 29.8 nh 0.4 mm, d = 2 mm, 5 turns ohesangyou pcb ? r1766, t = 0.4 mm, r = 4.5, size = 30 48 mm panasonic sma connecter ? waka 01k0790-20 waka a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
NE5550779A r09ds0040ej0300 rev.3.00 page 7 of 15 mar 12, 2013 component layout of t est circuit for 157 mhz r1 r1 c1 c1 1 1 l l 1 1 c c 20 20 c c 21 21 c c 2 2 3 3 c1 c1 c1 c1 c10 c10 l10 l10 c c 2 2 2 2 l20 l20 in in out out r1 r1 c1 c1 1 1 l l 1 1 c c 20 20 c c 21 21 c c 2 2 3 3 c1 c1 c1 c1 c10 c10 l10 l10 c c 2 2 2 2 l20 l20 in in out out a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
NE5550779A r09ds0040ej0300 rev.3.00 page 8 of 15 mar 12, 2013 typical characteristics 2 (t a = 25 c) rf: f = 157 mhz, v ds = 3.6/4.5/6/7.5/9 v, i dset = 40 ma, p in = ?10 to 20 dbm add - 3.6 v add - 6 v add - 4.5 v add - 9 v add - 7.5 v p out - 3.6 v p out - 4.5 v p out - 6.0 v p out - 7.5 v p out - 9 v output power p out (dbm) drain current i ds (a) input power p in (dbm) output power, drain current vs. input power 10 0.0 45 3.5 35 40 3.0 2.5 2.0 30 1.5 25 1.0 20 0.5 15 30 1510 ?5 05 20 power gain g p (db) power added efficiency add (%) remark the graphs indicate nominal characteristics. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
NE5550779A r09ds0040ej0300 rev.3.00 page 9 of 15 mar 12, 2013 test circuit schematic for 900 mhz c21 c10 in out c24 c11 c23 c20 c22 c12 c13 c2 v ds c1 l1 r1 v gs fet NE5550779A 50 50 components of test circuit for measuring electrical characteristics symbol value type maker c10 27 pf gqm1882c1h270jb01 murata c11 6.8 pf gqm1882c2a6r8db01 murata c12 15 pf gqm1882c1h150jb01 murata c13 18 pf gqm1882c1h180jb01 murata c20 8.2 pf gqm1882c1h8r2db01 murata c21 3.9 pf gqm1883c2a3r9cb01 murata c22 1.5 pf gqm1884c2a1r5cb01 murata c23 8.2 pf gqm1882c1h8r2db01 murata c24 100 pf gqm1882c1h101jb01 murata c1 1 f grm21bb31h105ka2l murata c2 1 f grm21bb31h105ka2l murata l1 74.7 nh d20-74n7 ohesangyou r1 20 k mcr03j203 rohm pcb ? r1766, t = 0.8 mm, r = 4.8, size = 30 40 mm panasonic sma connecter ? waka 01k0790-20 waka a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
NE5550779A r09ds0040ej0300 rev.3.00 page 10 of 15 mar 12, 2013 component layout of t est circuit for 900 mhz c1 c1 0 0 c c 11 11 c c 12 12 c c 13 13 c c 20 20 c c 21 21 r1 r1 c c 1 1 l1 l1 rf in rf in v v gs gs v v ds ds c c 22 22 c c 23 23 c c 24 24 c c 2 2 c10 c10 c11 c11 c12 c12 c13 c13 c20 c20 c21 c21 r1 r1 c1 c1 l1 l1 rf in rf in rf out rf out v v gs gs v v ds ds c22 c22 c23 c23 c24 c24 c2 c2 c1 c1 0 0 c c 11 11 c c 12 12 c c 13 13 c c 20 20 c c 21 21 r1 r1 c c 1 1 l1 l1 rf in rf in v v gs gs v v ds ds c c 22 22 c c 23 23 c c 24 24 c c 2 2 c10 c10 c11 c11 c12 c12 c13 c13 c20 c20 c21 c21 r1 r1 c1 c1 l1 l1 rf in rf in rf out rf out v v gs gs v v ds ds c22 c22 c23 c23 c24 c24 c2 c2 a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
NE5550779A r09ds0040ej0300 rev.3.00 page 11 of 15 mar 12, 2013 typical characteristics 3 (t a = 25 c) rf: f = 900 mhz, v ds = 3.6/4.5/6/7.5/9 v, i dset = 40 ma, p in = ?5 to 30 dbm input power p in (dbm) power gain, drain current vs. input power 0 40 30 25 20 15 10 5 0 30 25 20 15 10 5 0 10 2520 1050 ?10 ?5 15 2520 1050 ?10 ?5 15 power gain g p (db) power added efficiency add (%) remark the graphs indicate nominal characteristics. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
NE5550779A r09ds0040ej0300 rev.3.00 page 12 of 15 mar 12, 2013 s-parameters s-parameters and noise parameters are provided on our web site in a form (s2p) that enables direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. click here to download s-parameters. [products] [rf devices] [device parameters] url http://www.renesas.com/products/microwave/ a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
NE5550779A r09ds0040ej0300 rev.3.00 page 13 of 15 mar 12, 2013 mounting layout pad dimensions 79a (unit: mm) 1.7 4.0 0.5 1.0 5.9 1.2 gate source drain 0.5 6.1 0.5 through hole: 0.2 33 stop up the hole with a rosin or something to avoid solder flow. remark the mounting pad layout in this document is for reference only. when designing pcb, please consider workability of moun ting, solder joint reliability, prevention of solder bridge and so on, in order to optimize the design. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
NE5550779A r09ds0040ej0300 rev.3.00 page 14 of 15 mar 12, 2013 package dimensions 79a (unit: mm) 0.90.2 0.20.1 0.40.15 5.7 max. 5.7 max. 0.60.15 0.80.15 4.4 max. 4.2 max. source gate drain (bottom view) 3.60.2 1.50.2 1.2 max. 0.8 max. 1.0 max. source gate drain w 8 27001 a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
NE5550779A r09ds0040ej0300 rev.3.00 page 15 of 15 mar 12, 2013 recommended soldering conditions this product should be soldered and mounted under the following recommended conditions. for soldering methods and conditions other than those recommended below, contact your nearby sales office. soldering method soldering conditions condition symbol infrared reflow peak temperature (package surface temperature) : 260 c or below time at peak temperature : 10 seconds or less time at temperature of 220 c or higher : 60 seconds or less preheating time at 120 to 180 c : 120 30 seconds maximum number of reflow processes : 3 times maximum chlorine content of rosin flux (% mass) : 0.2% (wt.) or below ir260 wave soldering peak temperature (molten solder temperature) : 260 c or below time at peak temperature : 10 seconds or less preheating temperature (pack age surface temperature) : 120 c or below maximum number of flow processes : 1 time maximum chlorine content of rosin flux (% mass) : 0.2% (wt.) or below ws260 partial heating peak temperature (terminal temperature) : 350 c or below soldering time (per side of device) : 3 seconds or less maximum chlorine content of rosin flux (% mass) : 0.2% (wt.) or below hs350 caution do not use different soldering methods together (except for partial heating). a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history ne555 0779a data sheet description rev. date page summary 1.00 apr 26, 2012 ? first edition issued 2.00 jul 04, 2012 p.2 modification of electrical characteristics p.6 modification of components of test circuit for measuring electrical characteristics 3.00 mar 12, 2013 p3 modification of components of test circuit for measuring electrical characteristics p6 modification of components of test circuit for measuring electrical characteristics p9 modification of components of test circuit for measuring electrical characteristics

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